* RDS(ON)≦16mΩ@VGS=10V
* RDS(ON)≦20mΩ@VGS=4.5V
* Super high density cell design for extremely low RDS(ON)
* Exceptional on-resistance and maximum DC curre.

* Power Management in Note book
* Portable Equipment
* Battery Powered System
* DC/DC Converter
* Lo.

The ME4970 is the Dual N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are p.

ME4970-G

ME4970A

ME4970A-G

ME4972-G

ME4920

ME4920-G

ME4920D

ME4920D-G

ME4925

ME4925-G

ME4936

ME4936-G

ME4938D

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