ME4920D-G mosfet equivalent, dual n-channel mosfet.
* RDS(ON)≦30 mΩ@VGS=10V
* RDS(ON)≦40 mΩ@VGS=4.5V
* Super high density cell design for extremely low RDS(ON)
* Exceptional on-resistance and maximum DC cur.
* Power Management in Note book
* Portable Equipment
* Battery Powered System
* DC/DC Converter
* Lo.
The ME4920D-G is the Dual N-Channel logic enhancement mode power field effect transistors, using high cell density, DMOS trench technology.This high density process is especially tailored to minimize on state resistance.These devices are particularly.
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