ME4936-G datasheet, mosfet equivalent, Matsuki

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Features and benefits

RDS(ON) 36mΩ@VGS=10V RDS(ON) 45mΩ@VGS=4.5V Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability APPLICATIO.

Application

Power Management DC/DC Converter LCD TV & Monitor Display inverter CCFL inverter e Ordering Information: ME4936(Pb-free.

Description

The ME4936 is the Dual N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are p.

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