ME4856-G mosfet equivalent, n-channel 30-v(d-s) mosfet.
* RDS(ON)≦6mΩ@VGS=10V
* RDS(ON)≦8.5mΩ@VGS=4.5V
* Super high density cell design for extremely low RDS(ON)
* Exceptional on-resistance and maximum DC curre.
* Power Management in Note book
* Battery Powered System
* DC/DC Converter
* Load Switch
e Ordering Inf.
The ME4856 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are parti.
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