ME4812-G mosfet equivalent, n-channel 30-v(d-s) mosfet.
* Integrated Schottky diode
* RDS(ON)≦13mΩ@VGS=10V
* RDS(ON)≦21.5mΩ@VGS=4.5V
* Super high density cell design for extremely low RDS(ON)
* Exceptional .
* Power Management in Note book
* Battery Powered System
* DC/DC Converter low side switching
* Load Swi.
The ME4812 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology integrated Schottky diode. This high density process is especially tailored to minimize on-state resistanc.
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