RDS(ON) 30mΩ@VGS=10V (N-Ch) RDS(ON) 58mΩ@VGS=4.5V (N-Ch) RDS(ON) 45mΩ@VGS=-10V (P-Ch) RDS(ON) 75mΩ@VGS=-4.5V(P-Ch) Super high density cell design for extremely low RDS(ON.

Power Management in Note book Portable Equipment Battery Powered System DC/DC Converter Load Switch LCD Displ.

The ME4565AD4 is the N and P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices .

ME4565AD4-G

ME4565A

ME4565A-G

ME4565

ME4566

ME4566-G

ME4542

ME4542-G

ME4542D

ME4542D-G

ME4544

ME4544-G

ME4544D

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