ME4565A-G mosfet equivalent, n- & p-channel mosfet.
RDS(ON) 26.5mΩ@VGS=10V (N-Ch)
RDS(ON) 45mΩ@VGS=4.5V (N-Ch)
RDS(ON) 44mΩ@VGS=-10V (P-Ch)
RDS(ON) 60mΩ@VGS=-4.5V(P-Ch)
Super high density cell design for extremely low RDS(.
Power Management in Note book Portable Equipment Battery Powered System DC/DC Converter Load Switch LCD Display inv.
The ME4565A is the N and P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices ar.
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