ME3466-G mosfet equivalent, n-channel 150v (d-s) mosfet.
FEATURES
* RDS(ON)≦375mΩ@ VGS =10V
* RDS(ON)≦400mΩ@ VGS= 6V
* Super high density cell design for extremely low RDS(ON)
* Exceptional on-resistance and max.
* Power Management in Note book
* DC/DC Converter
* Load Switch
* LCD Display inverter
* The Ordering I.
The ME3466-G is the N-Channel logic enhancement mode power field effect transistors, using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly sui.
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