ME3491D
DESCRIPTION
The ME3491D is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook puter power management and other battery powered circuits where low in-line power loss are needed in a very small outline surface mount package.
PIN CONFIGURATION
(TSOP-6) Top View
FEATURES
- RDS(ON)≦50mΩ@VGS=-4.5V
- RDS(ON)≦65mΩ@VGS=-2.5V
- RDS(ON)≦82mΩ@VGS=-1.8V
- Super high density cell design for extremely low RDS(ON)
- Exceptional on-resistance and maximum DC current capability
APPLICATIONS
- Power Management in Note book
- Portable Equipment
- Battery Powered System
- Load Switch
- DSC
Ordering Information: ME3491D (Pb-free) ME3491D-G...
