ME2318S mosfet equivalent, n-channel 40v (d-s) mosfet.
* RDS(ON) ≦40mΩ@VGS=10V
* RDS(ON) ≦65mΩ@VGS=4.5V
* Super high density cell design for extremely low RDS(ON)
* Exceptional on-resistance and maximum DC cur.
* Power Management in Note book
* Portable Equipment
* DC/DC Converter
* Load Switch
* LCD Display i.
The ME2318S-G is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are par.
Image gallery
TAGS
Download