* RDS(ON)≦33mΩ@VGS=4.5V
* RDS(ON)≦40mΩ@VGS=2.5V
* RDS(ON)≦51mΩ@VGS=1.8V
* Super high density cell design for extremely low RDS(ON)
* Exceptional on-re.

* Power Management in Note book
* Portable Equipment
* Load Switch
* DSC Ordering Information: ME2312 /.

The ME2312-G is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are part.

ME2312-G

ME2313

ME2313-G

ME2317D-G

ME2318-G

ME2318S

ME2318S-G

ME2301

ME2301-G

ME2301A

ME2301A-G

ME2301DC

ME2301DC-G

Since 2006. D4U Semicon.   |   Contact Us   |   Privacy Policy   |   Purchase of parts