* RDS(ON) ≦75mΩ@VGS=-4.5V
* RDS(ON) ≦95mΩ@VGS=-2.5V
* RDS(ON) ≦130mΩ@VGS=-1.8V
* Super high density cell design for extremely low RDS(ON)
* Exceptiona.

* Power Management in Note book
* Portable Equipment
* Battery Powered System
* Load Switch
* DSC e.

The ME2301GC is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are part.

ME2301GC-G

ME2301

ME2301-G

ME2301A

ME2301A-G

ME2301DC

ME2301DC-G

ME2302

ME2302-G

ME2302D

ME2302D-G

ME2303

ME2303-G

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