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ME2301GC-G Datasheet, Matsuki

ME2301GC-G mosfet equivalent, p-channel 20v (d-s) mosfet.

ME2301GC-G Avg. rating / M : 1.0 rating-12

datasheet Download (Size : 884.19KB)

ME2301GC-G Datasheet
ME2301GC-G
Avg. rating / M : 1.0 rating-12

datasheet Download (Size : 884.19KB)

ME2301GC-G Datasheet

Features and benefits


* RDS(ON) ≦75mΩ@VGS=-4.5V
* RDS(ON) ≦95mΩ@VGS=-2.5V
* RDS(ON) ≦130mΩ@VGS=-1.8V
* Super high density cell design for extremely low RDS(ON)
* Exceptiona.

Application


* Power Management in Note book
* Portable Equipment
* Battery Powered System
* Load Switch
* DSC e.

Description

The ME2301GC is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are part.

Image gallery

ME2301GC-G Page 1 ME2301GC-G Page 2 ME2301GC-G Page 3

TAGS

ME2301GC-G
P-Channel
20V
D-S
MOSFET
Matsuki

Manufacturer


Matsuki

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