ME2301DC-G mosfet equivalent, p-channel 20v (d-s) mosfet.
RDS(ON) 110mΩ@VGS=-4.5V RDS(ON) 150mΩ@VGS=-2.5V Super high density cell design for extremely low RDS(ON)
APPLICATIONS
Power Management in Note book Portable Equipment Bat.
Power Management in Note book Portable Equipment Battery Powered System Load Switch DSC
PIN CONFIGURATION
(SOT-23) Top.
The ME2301DC is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are par.
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