ME16P10 mosfet equivalent, p-channel 100v (d-s) mosfet.
* RDS(ON)≦195mΩ@VGS=-10V
* RDS(ON)≦210mΩ@VGS=-4.5V
technology. This high density process is especially tailored to
* Super high density cell design for extr.
* Power Management in Note book
* DC/DC Converter
* Load Switch
* LCD Display inverter
(TO-252-3L) Top .
The ME16P10 is the P-Channel logic enhancement mode power field
effect transistors are produced using high cell density, DMOS trench
FEATURES
* RDS(ON)≦195mΩ@VGS=-10V
* RDS(ON)≦210mΩ@VGS=-4.5V
technology. This high density process is especi.
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