Datasheet4U Logo Datasheet4U.com

ME16P10 - P-Channel 100V (D-S) MOSFET

General Description

The ME16P10 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench

Key Features

  • RDS(ON)≦195mΩ@VGS=-10V.
  • RDS(ON)≦210mΩ@VGS=-4.5V technology. This high density process is especially tailored to.
  • Super high density cell design for extremely low RDS(ON) minimize on-state resistance. These devices are particularly suited.
  • Exceptional on-resistance and maximum DC current for low voltage.

📥 Download Datasheet

Datasheet Details

Part number ME16P10
Manufacturer Matsuki
File Size 1.05 MB
Description P-Channel 100V (D-S) MOSFET
Datasheet download datasheet ME16P10 Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
ME16P10 P-Channel MOSFET VBsemi
ME1117 1.0A Adjustable Voltage High Speed LDO Regulators Microne
ME1117A12 1.0A Adjustable Voltage High Speed LDO Regulators Microne
ME1117A18 1.0A Adjustable Voltage High Speed LDO Regulators Microne
ME1117A25 1.0A Adjustable Voltage High Speed LDO Regulators Microne

Other Datasheets by Matsuki

Part Number Description
ME16P10-G P-Channel 100V (D-S) MOSFET
ME100N03T N-Channel MOSFET
ME100N03T-G N-Channel MOSFET
ME100N15T-G N-Channel MOSFET
ME10N15 N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
ME16P10/ME16P10-G P- Channel 100-V (D-S) MOSFET GENERAL DESCRIPTION The ME16P10 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench FEATURES ● RDS(ON)≦195mΩ@VGS=-10V ● RDS(ON)≦210mΩ@VGS=-4.5V technology. This high density process is especially tailored to ● Super high density cell design for extremely low RDS(ON) minimize on-state resistance. These devices are particularly suited ● Exceptional on-resistance and maximum DC current for low voltage application such as cellular phone and notebook capability computer power management and other battery powered circuits , and low in-line power loss are needed in a very small outline surface mount package.