ME12N15-G datasheet, mosfet equivalent, Matsuki

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Features and benefits

* RDS(ON)≦150mΩ@VGS=10V
* RDS(ON)≦250mΩ@VGS=10V
* Super high density cell design for extremely low RDS(ON)
* Exceptional on-resistance and maximum DC curr.

Application

* Power Management
* DC/DC Converter
* Load Switch * Th Ordering Information: ME12N15 (Pb-free) ME12N15-G (.

Description

The ME12N15 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are parti.

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