ME12N04-G mosfet equivalent, n-channel 40-v (d-s) mosfet.
* RDS(ON)=28mΩ@VGS=10V (N-Ch)
* RDS(ON)=52mΩ@VGS=4.5V (N-Ch)
* Super high density cell design for extremely low RDS(ON)
* Exceptional on-resistance and ma.
* Power Management in Note book
* Portable Equipment
* Battery Powered System
* DC/DC Converter
* Lo.
The ME12N04 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are parti.
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