ME100N15T-G datasheet, mosfet equivalent, Matsuki

Features and benefits

* RDS(ON)≦13.6mΩ@VGS=10V
* Super high density cell design for extremely low RDS(ON)
* Exceptional on-resistance and maximum DC current capability APPLICATIONS.

Application

* Power Management in Note book
* DC/DC Converter
* Load Switch
* LCD Display inverter * The Ordering I.

Description

The ME100N15T-G is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are p.

Image gallery