ME08N20-G mosfet equivalent, n-channel mosfet.
* RDS(ON)≦0.4Ω@VGS=10V
* Super high density cell design for extremely low RDS(ON)
* Exceptional on-resistance and maximum DC current capability
APPLICATIONS
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* Po wer Management
* DC/DC Converter
* LCD TV & Monitor Display inverter
* CCFL inverter
* Secon da.
The ME08N20 is the N-C hannel lo gic e nhancement mo de p ower field effect transistors ar e pr oduced using high cel l de nsity DMOS trench technology. This high density process is especi ally tailored to minimize on-state resist ance. These dev ice.
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