ME08N20-G, ME08N20 Datasheet - Matsuki

ME08N20-G N-Channel MOSFET

The ME08N20 is the N-C hannel lo gic e nhancement mo de p ower field effect transistors ar e pr oduced using high cel l de nsity DMOS trench technology. This high density process is especi ally tailored to minimize on-state resist ance. These dev ices are p articularly su ited for lo w volt age appl.

ME08N20-G Features

* RDS(ON)≦0.4Ω@VGS=10V

* Super high density cell design for extremely low RDS(ON)

* Exceptional on-resistance and maximum DC current capability APPLICATIONS

* Po wer Management

* DC/DC Converter

* LCD TV & Monitor Display inverter

* CCFL inverter

* Secon dary Synchro

ME08N20-Matsuki.pdf

ME08N20-G Datasheet Preview — This datasheet PDF includes multiple part numbers: ME08N20-G, ME08N20. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

ME08N20-G, ME08N20

Manufacturer:

Matsuki

File Size:

622.82 KB

Description:

N-channel mosfet.

Note:

This datasheet PDF includes multiple part numbers: ME08N20-G, ME08N20.
Please refer to the document for exact specifications by model.

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TAGS

ME08N20-G ME08N20 N-Channel MOSFET Matsuki

ME08N20-G Distributor