- 7A, 800V, RDS(on)typ. = 1.35Ω@VGS = 10 V - Low gate charge ( typical 38.4nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability D G.

This Power MOSFET is produced using Maple semi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in.

SLP7N60C

SLP7N65C

SLP7N65S

SLP7N70C

SLP70R340SJ

SLP740C

SLP740UZ

SLP7R-2

SLP7S-2

SLP-1xxx-51

SLP-2xxx-51

SLP-3117E-51

SLP-3130C-81

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