- 7.0A, 700V, RDS(on)typ = 1.5Ω@VGS = 10 V - Low gate charge ( typical 23 nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability D G .

This Power MOSFET is produced using Maple semi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in.

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