- 16A, 500V, RDS(on)typ. = 305mΩ@VGS = 10 V - Low gate charge ( typical 52nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability D GD.

This Power MOSFET is produced using Maple semi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in.

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