- 10A, 650V, RDS(on) typ. = 0.62Ω@VGS = 10 V - Low gate charge ( typical 35 nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability Ab.

This Power MOSFET is produced using Maple semi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in.

SLP10N65C

SLP10N65S

SLP10N60C

SLP10N60U

SLP10N70C

SLP10N80CZ

SLP10R-2

SLP10S-2

SLP11N35UZ

SLP11N40UZ

SLP11R-2

SLP11S-2

SLP12N60C

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