SLF5N65S Datasheet, Maple Semiconductor

- 4.5A, 650V, RDS(on) = 2.5Ω@VGS = 10 V - Low gate charge ( typical 13.3nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability D TO-2.

This Power MOSFET is produced using Maple semi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in.

SLF5N65C

SLF5N60C

SLF5N50S

SLF5000

SLF50R140SJ

SLF50R240SJ

SLF50R290SJ

SLF001

SLF002

SLF004

SLF006

SLF011

SLF012