-18A, 500V, RDS(on) typ.= 0.21Ω@VGS = 10 V - Low gate charge ( typical - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability 43nC) D .

This Power MOSFET is producFeeadtuurseisng Maplesemi‘s Advanced Super-Junction This advanced technology theacsh--nb7Lo.oe6wlAeo,gng5a0ytee0. Vsch,paRerDgcSe(oi(na)ttlyylppy. i=cat0al .5i2lΩo5@nrCeV)dGS = 10 V to minimize conduction loss, pr-oH.

Since 2006. D4U Semicon.   |   Contact Us   |   Privacy Policy   |   Purchase of parts