4N60C mosfet equivalent, 600v n-channel mosfet.
- 4.0A, 600V, RDS(on)typ. = 2.2Ω@VGS = 10 V - Low gate charge ( typical 14nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability
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This Power MOSFET is produced using Maple semi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in.
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