Datasheet4U Logo Datasheet4U.com

MX26LV008T - 8M-BIT [1M x 8] CMOS SINGLE VOLTAGE 3V ONLY HIGH SPEED eLiteFlashTM MEMORY

Download the MX26LV008T datasheet PDF. This datasheet also covers the MX26LV008B variant, as both devices belong to the same 8m-bit [1m x 8] cmos single voltage 3v only high speed eliteflashtm memory family and are provided as variant models within a single manufacturer datasheet.

General Description

The MX26LV008T/B is a 8-mega bit Flash memory organized as 1M bytes of 8 bits.

MXIC's Flash memories offer the most cost-effective and reliable read/write nonvolatile random access memory.

The MX26LV008T/B is packaged in 40-pin TSOP.

Key Features

  • Extended single - supply voltage range 3.0V to 3.6V.
  • 1,048,576 x 8.
  • Single power supply operation - 3.0V only operation for read, erase and program www. DataSheet4U. com operation.
  • Fast access time: 55/70ns.
  • Low power consumption - 30mA maximum active current - 30uA typical standby current.
  • Command register architecture - Byte Programming (55us typical) - Sector Erase (Sector structure 16K-Bytex1, 8K-Bytex2, 32K-Bytex1, and 64K-Byte x15).

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (MX26LV008B_MacronixInternational.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number MX26LV008T
Manufacturer Macronix
File Size 367.13 KB
Description 8M-BIT [1M x 8] CMOS SINGLE VOLTAGE 3V ONLY HIGH SPEED eLiteFlashTM MEMORY
Datasheet download datasheet MX26LV008T Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
MX26LV008T/B Macronix NBit TM Memory Family 8M-BIT [1M x 8] CMOS SINGLE VOLTAGE 3V ONLY HIGH SPEED eLiteFlashTM MEMORY FEATURES • Extended single - supply voltage range 3.0V to 3.6V • 1,048,576 x 8 • Single power supply operation - 3.0V only operation for read, erase and program www.DataSheet4U.com operation • Fast access time: 55/70ns • Low power consumption - 30mA maximum active current - 30uA typical standby current • Command register architecture - Byte Programming (55us typical) - Sector Erase (Sector structure 16K-Bytex1, 8K-Bytex2, 32K-Bytex1, and 64K-Byte x15) • Auto Erase (chip & sector) and Auto Program - Automatically erase any combination of sectors with Erase Suspend capability.