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MX26LV040 - 4M-BIT [512K x 8] CMOS SINGLE VOLTAGE 3V ONLY HIGH SPEED eLiteFlashTM MEMORY

General Description

The MX26LV040 is a 4-mega bit Flash memory organized as 512K bytes of 8 bits.

MXIC's Flash memories offer the most cost-effective and reliable read/write nonvolatile random access memory.

The MX26LV040 is packaged in 32-pin PLCC, 32-pin TSOP and 32-pin PDIP.

Key Features

  • Extended single - supply voltage range 3.0V to 3.6V.
  • 524,288 x 8.
  • Single power supply operation - 3.0V only operation for read, erase and program www. DataSheet4U. com operation.
  • Fast access time: 55/70ns.
  • Low power consumption - 30mA maximum active current - 30uA typical standby current.
  • Command register architecture - Byte Programming (55us typical) - Sector Erase (Sector structure 64K-Byte x8).
  • Auto Erase (chip & sector) and Auto P.

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Datasheet Details

Part number MX26LV040
Manufacturer Macronix
File Size 652.45 KB
Description 4M-BIT [512K x 8] CMOS SINGLE VOLTAGE 3V ONLY HIGH SPEED eLiteFlashTM MEMORY
Datasheet download datasheet MX26LV040 Datasheet

Other Datasheets by Macronix

Part Number Description
MX26LV008B 8M-BIT [1M x 8] CMOS SINGLE VOLTAGE 3V ONLY HIGH SPEED eLiteFlashTM MEMORY
MX26LV008T 8M-BIT [1M x 8] CMOS SINGLE VOLTAGE 3V ONLY HIGH SPEED eLiteFlashTM MEMORY
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MX26LV160AT 16M-BIT [2Mx8/1Mx16] CMOS SINGLE VOLTAGE 3V ONLY BOOT SECTOR HIGH SPEED eLiteFlashTM MEMORY
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MX26L1620 16M-BIT [1M x 16] CMOS MULTIPLE-TIME-PROGRAMMABLE EPROM
MX26L3220 32M-BIT [2M x 16] CMOS MULTIPLE-TIME-PROGRAMMABLE EPROM
MX26L6419 64M [x16] SINGLE 3V PAGE MODE MTP MEMORY
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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MX26LV040 Macronix NBit TM Memory Family 4M-BIT [512K x 8] CMOS SINGLE VOLTAGE 3V ONLY HIGH SPEED eLiteFlashTM MEMORY FEATURES • Extended single - supply voltage range 3.0V to 3.6V • 524,288 x 8 • Single power supply operation - 3.0V only operation for read, erase and program www.DataSheet4U.com operation • Fast access time: 55/70ns • Low power consumption - 30mA maximum active current - 30uA typical standby current • Command register architecture - Byte Programming (55us typical) - Sector Erase (Sector structure 64K-Byte x8) • Auto Erase (chip & sector) and Auto Program - Automatically erase any combination of sectors with Erase Suspend capability.