* Q1: N-Channel 4.5 A, 60 V RDS(on) = 40 mΩ @ VGS = 10V RDS(on) = 45 mΩ @ VGS = 4.5V
* Q2: P-Channel
  –3.5 A,
  –60 V RDS(on) = 70 mΩ.

* DC/DC converter
* Power management
* LCD backlight inverter Features
* Q1: N-Channel 4.5 A, 60 V RDS(.

This complementary MOSFET device is produced using Mos-tech’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. Applications
* D.

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