MT4966 datasheet, mosfet equivalent, MOS-TECH

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Features and benefits

* Max rDS(on) = 102 mΩ at VGS = 10 V, ID = 2.7 A
* Max rDS(on) = 106 mΩ at VGS = 6 V, ID = 2.1 A
* High performance trench technology for extremely low rDS(on.

Application

* Synchronous Rectifier
* Primary Switch For Bridge Topology D2 D1 D1 D2 Pin 1 G2 S2 G1 S1 SO-8 D2 5 D2 6 .

Description

This N-Channel MOSFET is produced using MOS-TECH Semiconductor‘s advanced Power Trench® process that has been optimized for rDS(on), switching performance and ruggedness. Applications
* Synchronous Rectifier
* Primary Switch For Bridge Topolo.

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