MT3208 mosfet equivalent, n-channel power mosfet.
* 85A, 80V, RDS(on) = 0.0068Ω @VGS = 10 V
* Low gate charge ( typical 145nC)
* Low Crss ( typical 86pF)
* Fast sitching
* Improved dv/dt capability
D.
These N-Channel enha ncement mode power field effect transistors are produ ced using mos-tech’s pr oprietary, planar stripe, DMOS technology. This advanced technology has been e specially tailored to minimize on- state resistan ce, provide super ior .
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