MT3205A mosfet equivalent, n-channel power mosfet.
* RDS(on) = 3.6mΩ ( Typ.)@ VGS = 10V, ID = 100A
* High performance trench technology for extermly low RDS(on)
* High power and current handing capability
.
such as the development of weapons of mass destruction or for the purpose of any other military use. When exporting the .
* This N-Channel MOSFET is produced using MOS-TECH Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.
D
GDS
TO-220
G
MOSFET Ma.
Image gallery
TAGS
Download (Size : 1.30MB)