Datasheet Details
| Part number | MT3206 |
|---|---|
| Manufacturer | MT Semiconductor |
| File Size | 778.78 KB |
| Description | 60V N-Channel MOSFET |
| Datasheet |
 MT3206 Datasheet
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Description
These N-Channel enhancem ent m ode power field effect transistors ar e produced using Mos-tech’s proprietary, planar stripe, DMOS technology.
Features
- 50A, 60V, RDS(on) = 0.01Ω @VGS = 10 V.
- Low gate charge ( typical 43 nC).
- Low Crss ( typical 85 pF).
- Fast switching.
- 100% avalanche tested.
- Improved dv/dt capability.
- 175°C maximum junction temperature rating GDS TO-220 Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt.