MT3207 mosfet equivalent, n-channel power mosfet.
* RDS(on) = 8.5mΩ ( Typ.)@ VGS = 10V, ID = 40A
* Low gate charge(Typ. 57nC)
* Low Crss(Typ. 145pF)
* Fast switching
* Improved dv/dt capability
* .
These N-Channel enhancement mode power field effect transistors are produced using Mos-tech’s proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switchi.
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