MT3116 mosfet equivalent, n-channel powe mosfet.
* Max RDS(on) = 3.5mΩ at VGS = 10V, ID = 75A
* Fast Switching Speed
* Low Gate Charge
* High Performance Trench Technology for Extr emely Low
RDS(on)
.
* DC-DC primary bridge
* DC-DC Synchronous rectification
* Hot swap
D
G DS
TO-220
G
MOSFET Maximum Rati.
This N-Channel MOSFET is produced using MOS-TECH Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.
Applications
* DC-DC primary brid.
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