* RDS(on) = mΩ ( Typ.) @ VGS = 10V, ID = 5A
* Fast switching speed
* Low gate charge
* High performance trench technology for extremely low RDS(on)
.

This N-Channel MOSFET is producedusing PRVWHFK Vemiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. D G DS TO-220 G S MOSFET Maximum .

MT3103-Y

MT3116

MT3118-Y

MT3118-Y-A

MT3118-YSB

MT312

MT312C

MT3151A02-1

MT3151A03-1

MT3151A04-1

MT3151A05-1

MT3151A05-2

MT3170B

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