* VDS = 40V,ID =200A RDS(ON) < 4mΩ @ VGS=10V (Typ:3.3mΩ)
* Special process technology for high ESD capability
* High density cell design for ultra low Rdson.

MSN0409W

MSN0412W

MSN0460D

MSN0480D

MSN014WE

MSN0205

MSN0207E

MSN0212W

MSN0260D

MSN0304

MSN0306

MSN0310W

MSN0318W

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