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MSNP06065G1 - 650V Silicon Carbide Schottky Diode

Features

  • -650-Volt Schottky Rectifier -Shorter recovery time -High-speed switching possible -High-Frequency Operation -Temperature-Independent Switching Behavior -Extremely Fast Switching -Positive Temperature Coefficient on VF Benefits -Higher safety margin against overvoltage -Improved efficiency all load conditions -Increased efficiency compared to Silicon Diode alternatives -Reduction of Heat Sink Requirements -Parallel Devices Without Thermal Runaway -Essentialy No Switching Losses.

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Datasheet Details

Part number MSNP06065G1
Manufacturer Msemitek
File Size 688.27 KB
Description 650V Silicon Carbide Schottky Diode
Datasheet download datasheet MSNP06065G1 Datasheet

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MSNP06065G1 MSNP06065G1 650V Silicon Carbide Schottky Diode Features -650-Volt Schottky Rectifier -Shorter recovery time -High-speed switching possible -High-Frequency Operation -Temperature-Independent Switching Behavior -Extremely Fast Switching -Positive Temperature Coefficient on VF Benefits -Higher safety margin against overvoltage -Improved efficiency all load conditions -Increased efficiency compared to Silicon Diode alternatives -Reduction of Heat Sink Requirements -Parallel Devices Without Thermal Runaway -Essentialy No Switching Losses Applications -Switch Mode Power Supplies - Server/Telecom Power Supplies -Industrial Power Supplies -Solar Inverters Package Absolute Maximum Ratings 1 2 TC = 25℃ unless otherwise noted Symbol Parameter VRRM Repetitive Peak Reverse Volta
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