Datasheet4U Logo Datasheet4U.com

MSC0207GE - Dual N-Channel MOSFET

Features

  • VDS = 20V,ID =7A RDS(ON) < 27mΩ @ VGS=2.5V RDS(ON) < 21mΩ @ VGS=4.5V ESD Rating: 2000V HBM.
  • High power and current handing capability.
  • Lead free product is acquired.
  • Surface mount package.
  • ESD protected Lead Free.

📥 Download Datasheet

Datasheet Details

Part number MSC0207GE
Manufacturer MORESEMI
File Size 357.55 KB
Description Dual N-Channel MOSFET
Datasheet download datasheet MSC0207GE Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
MSC020SDA120B Zero Recovery Silicon Carbide Schottky Diode Microsemi
MSC025SMA120B N-Channel MOSFET Microchip
MSC010SDA070B Zero Recovery Silicon Carbide Schottky Diode Microchip
MSC010SDA070BCT 10A Silicon Carbide Schottky Dual Diode Microchip
MSC010SDA070K Zero Recovery Silicon Carbide Schottky Diode Microchip

Other Datasheets by MORESEMI

Part Number Description
MSC0207SE Dual N-Channel MOSFET
MSC0207W Dual P-Channel MOSFET
MSC0203S N/P-Channel Power MOSFET
MSC0205W Dual N-Channel MOSFET
MSC0206SE Dual N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
MSC0207GE 20V(D-S) Dual N-Channel Enhancement Mode Power MOS FET General Features ● VDS = 20V,ID =7A RDS(ON) < 27mΩ @ VGS=2.5V RDS(ON) < 21mΩ @ VGS=4.
Published: |