MSC0206W - Dual N-Channel MOSFET

Key Features

VDS =20V,ID =6A RDS(ON) < 28m Ω @ VGS=4.5V RDS(ON) < 37mΩ @ VGS=2.5V.
High density cell design for ultra low Rdson.
Fully characterized avalanche voltage and current Lead Free.

MSC0206W dual n-channel mosfet by MORESEMI - Datasheet Preview

Datasheet Details

Part number	MSC0206W
Manufacturer	MORESEMI
File Size	464.03 KB
Description	Dual N-Channel MOSFET
Datasheet	MSC0206W Datasheet

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MSC0206W 20V(D-S) Dual N-Channel Enhancement Mode Power MOS FET General Features ● VDS =20V,ID =6A RDS(ON) < 28m Ω @ VGS=4.5V RDS(ON) < 37mΩ @ VGS=2.