MDD7N65F mosfet equivalent, 650v n-channel enhancement mode mosfet.
* RDS(ON) = 1.2Ω @VGS = 10 V
* Ultra low gate charge
* Low reverse transfer Capacitanc
* Fast switching capability
* Avalanche energy tested
* Imp.
* The Power MOSFET is fabricated using the advanced planer VDMOS technology. The resulting device has low conduction resistance, superior switching performance and high avalanche energy.
General Features
* RDS(ON) = 1.2Ω @VGS = 10 V
* Ult.
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