MDD7N65F Datasheet, MDD

* RDS(ON) = 1.2Ω @VGS = 10 V
* Ultra low gate charge
* Low reverse transfer Capacitanc
* Fast switching capability
* Avalanche energy tested
* Imp.

* The Power MOSFET is fabricated using the advanced planer VDMOS technology. The resulting device has low conduction resistance, superior switching performance and high avalanche energy. General Features
* RDS(ON) = 1.2Ω @VGS = 10 V
* Ult.

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