MDD06N100 mosfet equivalent, n-channel mosfet.
VDS = 60V ID = 50A @VGS = 10V RDS(ON)
< 10.0 mΩ @VGS = 10V 100% UIL Tested
D
Absolute Maximum Ratings (Ta = 25oC)
Characteristics
Drain-Source Voltage
Gate-S.
Features
VDS = 60V ID = 50A @VGS = 10V RDS(ON)
< 10.0 mΩ @VGS = 10V 100% UIL Tested
D
Absolute Maximum Ratin.
The MDD06N100 uses advanced MagnaChip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality. MDD06N100 is suitable device for Synchronous Rectification For Server and general pur.
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