Datasheet4U.com

SI2301 - P-Channel Enhancement Mode Field Effect Transistor

MCC

📥 Download Datasheet

SI2301 Datasheet Preview — Preview of SI2301 PDF

datasheet Preview Page 2

datasheet Preview Page 3

Datasheet Details

Part number	SI2301
Manufacturer	MCC
File Size	338.81 KB
Description	P-Channel Enhancement Mode Field Effect Transistor
Datasheet	SI2301_MCC.pdf

SI2301 Product details

Features

Maximum Ratings @ 25OC Unless Otherwise Specified Symbol VDS ID IDM VGS PD RθJA TJ TSTG Parameter Drain-source Voltage Drain Current-Continuous Drain Current-Pulsed a Gate-source Voltage Total Power Dissipation Thermal Resistance Junction to Ambientb Operating Junction Temperature Storage Temperature Rating -20 -2.8 -10 ±8 1.25 100 -55 to +150 -55 to +150 Unit V A A V W ℃/W ℃ ℃ -20V,-2.8A, RDS(ON)=120mΩ@VGS=-4.5V R.

📁 SI2301 Similar Datasheet

Si2301 - P-Channel MOSFET (SiPU)
SI2301ADS - P-Channel MOSFET (Vishay)
SI2301B - P-Channel MOSFET (UMW)
Si2301BD - P-Channel MOSFET (Vishay Siliconix)
SI2301BDS - P-Channel MOSFET (Vishay Siliconix)
SI2301BDS-T1-GE3 - P-Channel MOSFET (VBsemi)
SI2301CDS - P-Channel MOSFET (Vishay)
SI2301DS - P-Channel MOSFET (Vishay Siliconix)

Other Datasheets by MCC

SI2301A - P-Channel MOSFET
SI2300 - N-Channel MOSFET
SI2302 - N-channel MOSFET
SI2302A - N-Channel MOSFET
SI2303 - P-Channel Enhancement Mode Field Effect Transistor
SI2304 - N-channel FET

Published: Dec 13, 2013 |