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MCC

2SK3018 Datasheet Preview

2SK3018 Datasheet

N-Channel Enhancement Mode Field Effect Transistor

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MCC
TM
Micro Commercial Components
  omponents
20736 Marilla Street Chatsworth

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$ %    !"#
2SK3018
Features
Low ON-Resistance
Low Input Capacitance
Low Voltage drive makes this device idipmenteal for portable equipment
Fast Switching Speed
Easily Designed Drive Circuits
Epoxy meets UL 94 V-0 flammability rating
Moisture Sensitivity Level 1
Mechanical Data
Halogen free available upon request by adding suffix "-HF"
Case: SOT-323, Molded Plastic
Terminals: Solderable per MIL-STD-202, Method 208
Terminal Connections: See Diagram
Marking: KN
N-Channel
Enhancement Mode
Field Effect Transistor
SOT-323
A
D
D
BC
GS
FE
Maximum Ratings
Operating Temperature: -55°C to +150°C
Storage Temperature: -55°C to +150°C
Maximum Thermal Resistance; 625oC/W Junction To Ambient
Parameter
Drain-Source-Voltage
Gate-Source-Voltage
Continuous Drain Current
Total Power Dissipation
Symbol Value
VDSS
VGSS
30
±20
ID 100
PD 200
Unit
V
V
mA
mW
Equivalent circuit
G HJ
K
DIMENSIONS
INCHES
MM
DIM MIN
MAX MIN MAX
A .071 .087 1.80 2.20
B .045 .053 1.15 1.35
C .083 .096 2.10 2.45
D
.026 Nominal
0.65Nominal
E .047 .055 1.20 1.40
F .012 .016 .30 .40
G .000
.004 .000
.100
H .035 .039 .90 1.00
J .004 .010 .100 .250
K .006 .016 .15 .40
Suggested Solder
Pad Layout
r 0.70
NOTE
0.90
1.90
0.65
0.65
Revision: A
www.mccsemi.com
1of 4
2013/09/26




MCC

2SK3018 Datasheet Preview

2SK3018 Datasheet

N-Channel Enhancement Mode Field Effect Transistor

No Preview Available !

2SK3018
MCC
TM
Micro Commercial Components
MOSFET ELECTRICAL CHARACTERISTICS(Ta=25unless otherwise noted)
Parameter
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Symbol Test Condition
V(BR)DSS VGS = 0V, ID = 10µA
IDSS VDS =30V,VGS = 0V
Min Typ
30
Gate –Source leakage current
IGSS VGS =±20V, VDS = 0V
Gate Threshold Voltage
VGS(th) VDS = 3V, ID =100µA
0.8
Drain-Source On-Resistance
RDS(on)
VGS = 4V, ID =10mA
VGS =2.5V,ID =1mA
Forward Transconductance
gFS VDS =3V, ID = 10mA
20
Dynamic Characteristics*
Input Capacitance
Ciss
13
Output Capacitance
Coss VDS =5V,VGS =0V,f =1MHz
9
Reverse Transfer Capacitance
Crss
4
Switching Characteristics*
Turn-On Delay Time
td(on)
15
Rise Time
Turn-Off Delay Time
tr
td(off)
VGS =5V, VDD =5V,
ID =10mA, Rg=10, RL=500
35
80
Fall Time
tf
80
*These parameters have no way to verify.
Max Units
0.2
±500
1.5
8
13
V
µA
nA
V
mS
pF
pF
pF
ns
ns
ns
ns
Revision: C
www.mccsemi.com
2 of 4
2013/09/26


Part Number 2SK3018
Description N-Channel Enhancement Mode Field Effect Transistor
Maker MCC
Total Page 4 Pages
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