2SK3018 - N-Channel Enhancement Mode Field Effect Transistor

Galaxy Microelectronics

Key Features

z Low on-resistance. z Fast switching speed. z Low voltage drive(2.5V)makes this Device ideal for portable equipment. z Easily designed drive circuits. z Easy to parallel. Pb Lead-free.

2SK3018 n-channel enhancement mode field effect transistor by Galaxy Microelectronics - Datasheet Preview

Datasheet Details

Part number	2SK3018
Manufacturer	Galaxy Microelectronics
File Size	230.15 KB
Description	N-Channel Enhancement Mode Field Effect Transistor
Datasheet	2SK3018 Datasheet

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Production specification N-Channel Enhancement Mode Field Effect Transistor 2SK3018 FEATURES z Low on-resistance. z Fast switching speed. z Low voltage drive(2.5V)makes this Device ideal for portable equipment. z Easily designed drive circuits. z Easy to parallel. Pb Lead-free APPLICATIONS z Interfacing,switching (30V,100mA) ORDERING INFORMATION Type No.