• Part: 2SK3018
  • Description: N-Channel Enhancement Mode Field Effect Transistor
  • Category: Transistor
  • Manufacturer: Galaxy Microelectronics
  • Size: 230.15 KB
Download 2SK3018 Datasheet PDF
Galaxy Microelectronics
2SK3018
FEATURES z Low on-resistance. z Fast switching speed. z Low voltage drive(2.5V)makes this Device ideal for portable equipment. z Easily designed drive circuits. z Easy to parallel. Pb Lead-free APPLICATIONS z Interfacing,switching (30V,100m A) ORDERING INFORMATION Type No. Marking SOT-23 Package Code SOT-23 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value VDSS Drain-Source voltage VGSS ID IDP- 1 IDR IDRP- 1 PD- 2 Gate -Source voltage ±20 drain current Reverse drain current Continuous 100 Pulsed Continuous 100 Pulsed Total Power Dissipation(TC=25℃) Tch, Tstg Channel and Storage Temperature -55 to +150 - 1Pw≤10us,Duty cycle≤50% - 2With each pin mounted on the remended lands. Units V V m A m A m W ℃ C174 Rev.A .gmicroelec. 1 Production...