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2SK3018W - N-Channel POWER MOSFET

General Description

Low on-resistance.

Fast switching speed.

Gate Protection Diode 2 SOURCE

portable equipment.

Easily designed drive circuits.

Easy to parallel.

Key Features

  • Simple Drive Requirement.
  • Small Package Outline 2SK3018W 3 1 2 SOT-323(SC-70) Maximum Ratings (TA=25°C Unless Otherwise Specified) Rating Symbol Value Drain-Source Voltage Gate-Source Voltage Continuous Drain Current TA=25°C Pulsed Drain Current (tp ≤ 10µS) VDS VGS ID IDM 30 ±20 100 400 Power Dissipation (TA=25°C).
  • PD 200 Operating Junction Temperature Range TJ +150 Storage Temperature Range Tstg -55 to +150.
  • With each pin mounted on the recommended lands. D.

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Datasheet Details

Part number 2SK3018W
Manufacturer WEITRON
File Size 681.14 KB
Description N-Channel POWER MOSFET
Datasheet download datasheet 2SK3018W Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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N-Channel POWER MOSFET P b Lead(Pb)-Free 3 DRAIN 1 Description: * Low on-resistance. * Fast switching speed. GATE *Gate Protection Diode 2 SOURCE * Low voltage drive (2.5V) makes this device ideal for portable equipment. * Easily designed drive circuits. * Easy to parallel. Features: * Simple Drive Requirement * Small Package Outline 2SK3018W 3 1 2 SOT-323(SC-70) Maximum Ratings (TA=25°C Unless Otherwise Specified) Rating Symbol Value Drain-Source Voltage Gate-Source Voltage Continuous Drain Current TA=25°C Pulsed Drain Current (tp ≤ 10µS) VDS VGS ID IDM 30 ±20 100 400 Power Dissipation (TA=25°C)* PD 200 Operating Junction Temperature Range TJ +150 Storage Temperature Range Tstg -55 to +150 * With each pin mounted on the recommended lands.