NPTB00004B transistor equivalent, gan power transistor.
* GaN on Si HEMT D-Mode Transistor
* Suitable for linear and saturated applications
* Tunable from DC - 6 GHz
* 28 V Operation
* 14.8 dB Gain @ 2.5 GH.
* Tunable from DC - 6 GHz
* 28 V Operation
* 14.8 dB Gain @ 2.5 GHz
* 57 % Drain Efficiency @ 2.5 GHz
The NPTB00004B GaN HEMT is a power transistor optimized for DC - 6 GHz operation. This device supports CW, pulsed, and linear operation with output power levels to 5 W (37 dBm) in an industry standard surface mount plastic package.
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