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MSS39-148-E25 - P-Type Silicon Schottky Diodes

Download the MSS39-148-E25 datasheet PDF. This datasheet also covers the MSS39-045-C15-MA variant, as both devices belong to the same p-type silicon schottky diodes family and are provided as variant models within a single manufacturer datasheet.

General Description

The MSS39-xxx-x Series of Schottky diodes is fabricated on P-Type epitaxial substrates for superior 1/f noise performance in microwave biaseddetector applications up to 40 GHz.

Rev.

VBR Min.

Key Features

  • Very Low 1/f Noise.
  • Detector.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (MSS39-045-C15-MA-COM.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by MACOM Technology Solutions

Part Number Description
MSS39-148-B10B P-Type Silicon Schottky Diodes
MSS39-148-H20 P-Type Silicon Schottky Diodes
MSS39-144-B10B P-Type Silicon Schottky Diodes
MSS39-146-B10B P-Type Silicon Schottky Diodes
MSS39-152-B10B P-Type Silicon Schottky Diodes

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
MSS39-xxx-x Series P-Type Silicon Schottky Diodes Features  Very Low 1/f Noise  Detector Applications up to 40 GHz  Chip Beam Lead and Packaged Devices Description The MSS39-xxx-x Series of Schottky diodes is fabricated on P-Type epitaxial substrates for superior 1/f noise performance in microwave biaseddetector applications up to 40 GHz. Rev. V1 Chip Electrical Specifications: TA = 25°C Model VBR Min. V VF Typ. V MSS39-045-C15 5 0.40 CJ Max. pF 0.10 TSS Ttp. dBm -58 ϓ Typ. mV / mW 5,000 Frequency Max. GHz 18 MSS39-048-C15 5 0.39 0.15 -58 5,000 12 Test Conditions IR = 10 µA IF = 1 mA VR = 0 V, DC Bias = 10 mA, F = 10 GHz F = 1 MHz RL = 100 KΩ Video BW = 2 MHz Outline C15 C15 Beam Lead Electrical Specifications: TA = 25°C Model VBR Min. V VF Typ.