Datasheet4U Logo Datasheet4U.com

MSS39-148-B10B - P-Type Silicon Schottky Diodes

Download the MSS39-148-B10B datasheet PDF (MSS39-045-C15-MA included). The manufacturer datasheet provides complete specifications, pinout details, electrical characteristics, and typical applications for p-type silicon schottky diodes.

Description

The MSS39-xxx-x Series of Schottky diodes is fabricated on P-Type epitaxial substrates for superior 1/f noise performance in microwave biaseddetector applications up to 40 GHz.

Rev.

VBR Min.

Features

  • Very Low 1/f Noise.
  • Detector.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (MSS39-045-C15-MA-COM.pdf) that lists specifications for multiple related part numbers.
Other Datasheets by MA-COM

Full PDF Text Transcription

Click to expand full text
MSS39-xxx-x Series P-Type Silicon Schottky Diodes Features  Very Low 1/f Noise  Detector Applications up to 40 GHz  Chip Beam Lead and Packaged Devices Description The MSS39-xxx-x Series of Schottky diodes is fabricated on P-Type epitaxial substrates for superior 1/f noise performance in microwave biaseddetector applications up to 40 GHz. Rev. V1 Chip Electrical Specifications: TA = 25°C Model VBR Min. V VF Typ. V MSS39-045-C15 5 0.40 CJ Max. pF 0.10 TSS Ttp. dBm -58 ϓ Typ. mV / mW 5,000 Frequency Max. GHz 18 MSS39-048-C15 5 0.39 0.15 -58 5,000 12 Test Conditions IR = 10 µA IF = 1 mA VR = 0 V, DC Bias = 10 mA, F = 10 GHz F = 1 MHz RL = 100 KΩ Video BW = 2 MHz Outline C15 C15 Beam Lead Electrical Specifications: TA = 25°C Model VBR Min. V VF Typ.
Published: |