MSS39-148-B10B diodes equivalent, p-type silicon schottky diodes.
* Very Low 1/f Noise
* Detector Applications up to 40 GHz
* Chip Beam Lead and Packaged Devices
Description
The MSS39-xxx-x Series of Schottky diodes is fabri.
up to 40 GHz
* Chip Beam Lead and Packaged Devices
Description
The MSS39-xxx-x Series of Schottky diodes is fabricat.
The MSS39-xxx-x Series of Schottky diodes is fabricated on P-Type epitaxial substrates for superior 1/f noise performance in microwave biaseddetector applications up to 40 GHz.
Rev. V1
Chip
Electrical Specifications: TA = 25°C
Model
VBR Min.
V
.
Image gallery
TAGS
Manufacturer
Related datasheet
Download (Size : 657.97KB)